The article mainly talks about how to change a flash memory chip into an USB in a relatively simple way. Though making a USB by yourself isn’t always cheaper than purchasing, but you can feel the joy of DIY.
This article mainly introduces what is 3D NAND flash memory and its advantage. 3D NAND is a new type of flash memory, which can solve the limitation caused by 2D or flat flash memory, but there is still a long way to go. Many manufactures are working hard to achieve stacking 140 layers, which means a huge advantage to compete with other products.
In flash memory, when the time of data storage reaches a certain value, it will be wrong because of the TAT effect. However, the Read Scrub technology of SSDs will reduce the error that ECC can't correct, so as to solve the problem of data retention. And there are also some data integrity techniques to ensure data integrity.
This article will clarify the misconceptions about NAND flash memory. SSD may perform bad because poor quality of controller. SATA SSDs are still in high demand although PCIe dominates many consumer markets. As the function of the average erasing storage block technology being used, flash memory will break sooner or later. High-order custom managed NAND solutions can be easily built. Solutions are...
Flash is a kind of nonvolatile memory, whose basic storage cell is an NMOS-like bilayer floating gate MOS transistor. The write operation or erase operation depend on electrons enter or escape from the foating gate. According the size of data stored in a storage cell, flash is divided into SLC , MLC and TLC.
Many people may wonder how the sand becomes wafers. In fact, the sand is purified into polycrystalline silicon, and then polycrystalline silicon is used as raw material to make monocrystalline silicon. Silicon ingots, after being cut, rolled, sliced, chamfered, polished, laser engraved and packaged, become the basic raw material for integrated circuit factories—wafers.
Recently, Samsung has released a new UFS memory card with a capacity of up to 256GB, which completely crushes the existing Micro SD (TF card) flash card at the reading and writing speed. Although there is no obvious difference in appearance between them, UFS card with higher cost has a larger capacity than TF card. The actual performance of UFS memory card is very worthy of our expectation.
This article mainly compare synchronous interface with asynchronous interface. Generally, the asynchronous is faster than the synchronous in transmission rate.In addition, the asynchronous interface has no clock, each data read is triggered by a RE_n signal, and each data write is triggered by a WE_n signal. The difference is that the synchronous interface has a clock signal, data read-write synch...
Flash is inherently not a reliable storage medium due to its limited lifespan. The current controllers combine advanced technologies in wear leveling, power failure management and error correction to enable us to safely and reliably use current high-density flash.
With the development of technology, mobile phone has become an indispensable mobile device at present, whose configuration has evolved from single-core to eight-core or even ten-core, making its functions more and more powerful. The high-end mobile phone upgraded the standard of storage chips from eMMC to UFS, and began to popularize in thousand-yuan smartphone models.