As the development of SSD from SLC flash memory to QLC flash memory, the number of erasing and writing of flash memory is decreasing. It seems a regressive development while the cost of SSD can be reduced so that ordinary people can afford them.

The development of flash memory is accompanied by advances in error correction technology. The improvement of the error correction effect enables the high-quality original TLC flash memory to be erased to 3,000 times.

Toshiba RC100 SSD is a special products among NVMe SSDs. It uses Toshiba's BiCS3 high-density 3D flash memory, MCP multi-chip fusion package technology and NVMe protocol, so its small body contains great energy.

The article introduces some pitfalls we can avoid when purchasing SSDs, such as redundancy, flash memory, controller, interfaces, transport protocol, after-sales and brand praise.

There are two installation location of NVMe SSD. The first one is the main board with M.2 slot. The other one is installing the NVMe SSD like a graphics card via a PCIe adapter card. These two installation ways can bring two different performances to you.

Most storage arrays use either all hard drives or all solid state drives. The Drobo 8D delivers the best of both worlds by intelligently combing hard drives and solid state drives to deliver both capacity and performance. Compared to installing hard drives in a computer chassis, Drobo 8D provides a more flexible way to combine hard drives, so users do not need to learn how to install hard drives.

Every company has its own solution, but Hyperstone has developed its own error correction engine to reduce the failure rate in NAND flash-based systems.

There are three main types of NAND flash: SLC, MLC and TLC, and another type of NAND flash is called 3D NAND. All major flash manufacturers are actively working on different ways to reduce the cost per bit of flash.

MLC NAND flash memory stores 2 bits of data in each cell, while SLC NAND store 1bit in each cell. The higher density means lower cost and more complex programs and read circuits. Because of its unique structure and device characteristics, MLC NAND Flash is more sensitive to interference. It is important to remember that although MLC NAND has some advantages in high density and low cost, it still has low performance, low durability and low reliability. Therefore, industrial applications usually use SLC NAND as memory.

This article mainly introduces the white particles of flash memory and how to identify the original manufacturers from the logo, and the fake method of flash memory.

Flash memory is the memory that uses flash memory technology to store electronic information. And, memory is a storage space that the CPU can directly address, and is made of a semiconductor device.

As the size of transistors approaches the physical limit, semiconductor processes are becoming increasingly difficult to advance. The sound that Moore's law is invalid begins to spread. Therefore, the scientific community is finding some new technology to promote Moore's law. Karl Skjonnemand proposed a new idea that "Molecular engineering and natural simulation methods" can be used to realize self-directed assembly of transistors, which can greatly reduce the cost of semiconductor manufacturing.

According to latest survey of DRAMeXchange, DRAM prices will continue to decline due to oversupply and weak demand. At present, most of market share of memory are mastered by three large companies, namely Samsung, SK Hynix and Micron. The speed of decreasing or increasing production is different, easy to cause legal problem of monopoly. Fortunately, it is generally believed that market conditions will recover with increasing demand in the second half of the year.

The article briefly introduces the development of memory DDR. Memory can be divided into RAM and ROM according to whether data is lost or not at power failure. In addition, RAM can further be divided into SRAM and DRAM. The development of SDRAM is from 30pin SIPP interface to 30pin SIMM or 72pin SIMM. It also briefly show the characters and application of asynchronous DRAM which can be divided into FPM DRAM and EDO DRAM. From DDR to DDR4, the data transmission rate is increasing and capacity is becoming larger and larger.

Mobile RAM RAM falls into SRAM and DRAM, which decides the speed of mobile system and running program. It’s features include random access, volitality, high accessing speed, need of refreshment and sensitive to static electricity.