According to latest survey of DRAMeXchange, DRAM prices will continue to decline due to oversupply and weak demand. At present, most of market share of memory are mastered by three large companies, namely Samsung, SK Hynix and Micron. The speed of decreasing or increasing production is different, easy to cause legal problem of monopoly. Fortunately, it is generally believed that market conditions...
The article mainly introduces differences among DRAM, SDRAM, and SRAM in detail. DRAM requires refreshing with large capacity, while SDRAM and SRAM not. In addition, the storage unit structure of them also be compared in the passage.
The article briefly introduces the development of memory DDR. Memory can be divided into RAM and ROM according to whether data is lost or not at power failure. In addition, RAM can further be divided into SRAM and DRAM. The development of SDRAM is from 30pin SIPP interface to 30pin SIMM or 72pin SIMM. It also briefly show the characters and application of asynchronous DRAM which can be divided int...
Mobile RAM RAM falls into SRAM and DRAM, which decides the speed of mobile system and running program. It’s features include random access, volitality, high accessing speed, need of refreshment and sensitive to static electricity.
Memory can be divide into bare bar and the bar wearing cooling fin in appearance. Generally speaking, most of dressed up bars are OC strips with a higher frequency when the XMP option is turned on, and bare bar has a low frequency.
DRAM is the abbreviation of Dynamic random access memory, it’s power dissipation is lower than SRAM.
At this year's Hot Chips conference, industry experts called for a new generation of security-designed computer architecture to avoid the recurrence of Spectre/Meltdown security breaches. Surprisingly, to create safer products, Microsoft described the Pluton security module, while Google introduced Titan, which is expected that the two companies could merge into a standard one day.
This article briefly introduces the types and storage mode of ROM and RAM. Take S3C2440 memory Bank as an example, introducing the internal structure and working principle of SDRAM.
The new type of DRAM breaks the refresh limitation with VLT technology, which can reduce the cost and complexity of DRAM, and doesn’t need new materials and technology. This article compares it with traditional DRAM and LPDDR4 to illustrate the difference between them, and this technology can be used on LPDDR4 without distinction.
From 2014 to 2017, the Intel Core processor uses 14nm processes. Moore's Law changes as silicon transistor density from “doubling every year” to “doubling every 18 months” and now faces a severe challenge. Intel’s "Tick-Tock" model is replaced by “PAO” model but the optimization process has run out of time yet. Moore's Law is adjusted according to different periods. The process of printing transis...