The passage mainly introduces the difference between USB 2.0 and USB 3.0. In addition to theoretical maximum transmission speed and maximum current supply capacity, you can easily distinguish them from their appearance and structure such as the color of base and the number of contracts.
This part introduces the evolution of photoresist from exposure source to film-forming material in detail. As time goes by, four types of photoresist have been developed by shrinking the line width of integrated circuits and continuously improving resolution, in order to meet various requirements.
Photoresist is an etching-resistant film material whose solubility changes through irradiation or radiation of different light sources. As the core of lithography, photoresist play an important role in micro-fabrication technology. However, it’s hard to make breakthrough of research and development in photoresist.
Insert micro SD card to expand additional storage space is a good choice to satisfy storage needs. The article gives some good advice to us for how to correctly select a micro SD card. Speed levels, application performance, brand reputation and user testing are important factors to be considered when purchasing micro SD cards.
The passage mainly shows 3 kinds of concurrent execution units in NAND Flash chip, namely Device, Die, and Plane. By understanding internal structures and principles of these concurrent units, you may be will good at improving IO performance of NAND Flash.
The article tells us that some misconceptions about embedded flash solution. For example, many people thought that embedded flash memory cannot break through the nodes below 90nm but now it has developed to 28nm. Embedded flash is scalable and can be used in advanced technology nodes of OEM plants.
This paper briefly introduces different dimensions, capacities and clock frequencies of SD memory. When designing power supply, operating voltage and power consumption of SD memory should be considered. If voltage is too high, FAN5362 buck converter, an alternative to LDO regulator, is necessary to avoid power problems.
This part briefly shows the principle and usage of block erasure operation, reset operation, write protection operations and error management. In addition, the author shares some precautions in order to ensure the reliability of data.
This part introduces the principle of programming operations and internal data move in detail. Programming operations need SERIAL DATA INPUT 0x80 and RANDOM DATA INPUT 0x85 commands, while Internal data move requires two command sequences: READ FOR INTERNAL DATA MOVE(0x00-0x35) and INTERNAL DATA MOVE(0x85-0x10) command.
This part briefly explains the definitions of different parameters, such as bus operation and command list. Before understanding the principle and structure of NAND Flash, you should know about these following definitions.
