The article introduces difference between memory and storage in mobile and computer in a way easy to understand. According to elucidating storage principles, we know that storage units of both DRAM and NAND are actually b instead of B. In addition, comparison among SLC, MLC and TLC is also shown here.
The article introduces difference between memory and storage in mobile and computer in a way easy to understand. According to elucidating storage principles, we know that storage units of both DRAM and NAND are actually b instead of B. In addition, comparison among SLC, MLC and TLC is also shown here.
NVMe, short for Non-Volatile Memory Express, is a specification for SSD with PCI-E channel. The article mainly introduces major four advantages of NVMe SSD compared with AHCI, including low latency, IOPS improvement, lower power consumption and wide applicability of drivers.
Lithography and etching are indispensable in producing modern large-scale integrated circuits such as chips. In China, advance etching machine has developed well and been mass-produced. Unfortunately, in terms of lithography machines, China still has a long way to go due to a large gap to the world.
The larger WA is, the more extra data will be written in flash memory. In other words, it leads to more actual data being written into flash memory of SSD compared with user data. So SSD design aims at making WA as small as possible. The larger OP is, the smaller WA is, which means SSD performance will be better.
The passage mainly shows 3 kinds of concurrent execution units in NAND Flash chip, namely Device, Die, and Plane. By understanding internal structures and principles of these concurrent units, you may be will good at improving IO performance of NAND Flash.
The article tells us that some misconceptions about embedded flash solution. For example, many people thought that embedded flash memory cannot break through the nodes below 90nm but now it has developed to 28nm. Embedded flash is scalable and can be used in advanced technology nodes of OEM plants.
This paper briefly introduces different dimensions, capacities and clock frequencies of SD memory. When designing power supply, operating voltage and power consumption of SD memory should be considered. If voltage is too high, FAN5362 buck converter, an alternative to LDO regulator, is necessary to avoid power problems.
This part briefly shows the principle and usage of block erasure operation, reset operation, write protection operations and error management. In addition, the author shares some precautions in order to ensure the reliability of data.
This part introduces the principle of programming operations and internal data move in detail. Programming operations need SERIAL DATA INPUT 0x80 and RANDOM DATA INPUT 0x85 commands, while Internal data move requires two command sequences: READ FOR INTERNAL DATA MOVE(0x00-0x35) and INTERNAL DATA MOVE(0x85-0x10) command.
